Congratulations to Andres Aguirre on winning the Best Presentation award at the 2025 International Conference on Microelectronic Test Structures. Andres presented his paper “D-Mode GaN/AlGaN/GaN MOS-HEMT Test Structures for Evaluating Gate Dielectric Impact on Device Performance”.
Andres is a 4th year graduate student in the UTD Materials Sciences and Engineering Department. His research is focused on the evaluation of gate oxide materials for GaN MOS-HEMTs for space applications. He is a member of the North Texas Semiconductor Institute at UTD, working closely with both the CHESS and C-SPEC divisions of the institute.
