Theodore Moise
Director
theodore.moise@utdallas.edu
Phone: 972-883-5740
Overview
Ted Moise earned a B.S. degree in Physics and Engineering from Trinity College, Hartford, CT, in 1987. In 1992, he earned a Ph.D. degree in electrical engineering from Yale University and was awarded the Harding Bliss Prize for excellence in Engineering and Applied Science. Ted joined TI in 1992 where he was responsible for the development of high-performance quantum-effect devices and circuits and served as program manager for several DARPA-sponsored projects. In 1997, Ted started work on the development of scaled ferroelectric capacitors leading to the first demonstration of low-voltage, high-density, embedded ferroelectric random-access memory. Since achieving FRAM production on the 130nm node in 2007, TI and its partners have designed and sold FRAM-based products with applications ranging from implantable medical devices to ultra-low-power micro-controllers and automotive data recorders. From 2007-2018, Ted led technology development teams focusing on non-volatile memory, high-performance analog CMOS, high-performance/low-noise BiCMOS, and sensor technology. From 2018 to 2021, Ted managed TI’s advanced electrical failure analysis and physical failure analysis laboratories. After retiring from Texas Instruments in 2021, Ted joined the University of Texas at Dallas as a Research Scientist. Ted also serves as the director of the North Texas Semiconductor Institute